f112r6a015sc target datasheet flowpack 1 1200v/15a inverter, blocking diodes very compact housing, easy to route igbt4 technology power regeneration 10-F112R6A015SC-M438E08 10-f112r6a015sc01-m438e18 t j =25c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 1600 v maximum junction temperature t j max 150 c inverter transistor t sc t j 150c 10 s v cc v ge =15v 800 v p tot gate-emitter peak voltage power dissipation per diode i 2 t w types i2t-value maximum ratings i fav a 2 s i fsm condition blocking diode a a features flow1 housing target applications schematic dc forward current surge forward current t j =25c 360 t j =t j max t p =10ms t j =t j max p tot repetitive peak collector current power dissipation per igbt maximum junction temperature short circuit ratings turn off safe operating area collector-emitter break down voltage dc collector current t j =t j max t j =t j max vce 1200v, tj top max t p limited by t j max t h =80c a 1200 a v 30 v ce i c v ge i cpulse t j max w a v c 175 t h =80c 36 t h =80c 42 370 20 45 t h =80c 57 20 1 revi sion: 3 copyright by vincotech
f112r6a015sc target datasheet t j =25c, unless otherwise specified parameter symbol value unit maximum ratings condition inverter diode thermal properties insulation properties v is t=2s dc voltage 4000 v min 12.7 mm min 12.7 mm cti >200 comparative tracking index insulation voltage creepage distance t op operation temperature under switching condition clearance -40?+(tjmax - 25) c storage temperature t stg -40?+125 c t j =t j max t p limited by t j max dc forward current t j =t j max a i f v rrm t j =25c a w 175 c maximum junction temperature peak repetitive reverse voltage repetitive peak forward current power dissipation per diode v t j max i frm p tot 1200 t h =80c 38 t h =80c 18 30 2 revi sion: 3 copyright by vincotech
f112r6a015sc target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 0.8 1.1 1.35 t j =125c 1.03 t j =25c 0.9 t j =125c 0.77 t j =25c 10 t j =125c 10 t j =25c 0.1 t j =125c thermal resistance chip to heatsink per chip r thjh 1.68 thermal resistance chip to heatsink per chip r thjc tbd. t j =25c 5 5.8 6.5 t j =150c t j =25c 1.6 1.84 2.25 t j =150c 2.25 t j =25c 0.005 t j =150c t j =25c 200 t j =150c t j =25c 85.2 t j =150c 84.8 t j =25c 17 t j =150c 21.8 t j =25c 201 t j =150c 264 t j =25c 82.1 t j =150c 123 t j =25c 0.82 t j =150c 1.26 t j =25c 0.88 t j =150c 1.36 thermal resistance chip to heatsink per chip r thjh 1.67 thermal resistance chip to case per chip r thjc tbd. t j =25c 1.35 1.90 2.35 t j =150c 1.91 t j =25c t j =150c 16.06 t j =25c t j =150c 433.4 t j =25c t j =150c 2.75 di ( rec ) max t j =25c /d t t j =150c 109 t j =25c t j =150c 1.16 thermal resistance chip to heatsink per chip r thjh 2.52 ther mal resistance chip to case per chip r thjc tbd. tj=25c ma ? pf 80 mws ns ns a nc na k/w v v 55 rgon=8 ? thermal grease thickness 50um = 1 w/mk 1600 600 600 15 0.0005 25 0 15 1200 collector-emitter saturation voltage collector-emitter cut-off current incl. diode fall time turn-off delay time turn-on delay time rise time gate-emitter leakage current reverse recovery time reverse recovered energy peak rate of fall of recovery current turn-on energy loss per pulse reverse recovered charge inverter diode peak reverse recovery current reverse transfer capacitance diode forward voltage gate charge c ies 15 15 15 rgon=8 ? 0 20 15 rgoff=8 ? f=1mhz mws a/ s k/w c reverse current i r k/w v v m ? ma 35 35 35 characteristic values forward voltage threshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) v f v to r t blocking diode value conditions input capacitance output capacitance turn-off energy loss per pulse integrated gate resistor inverter transistor gate emitter threshold voltage v ge(th) v ce(sat) i ces r gint i ges t f e on e off t d(on) i rrm v f erec c oss c rss q rr t rr q gate t r t d(off) v ce =v ge thermal grease thickness 50um = 1 w/mk 0 15 15 v none tj=25c 120 900 thermal grease thickness 50um = 1 w/mk 3 revisio n: 3 copyright by vincotech
f112r6a015sc target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max characteristic values value conditions tj=25c tc=100c tc=100c tj=25c thermistor r/r r100=1486 ? rated resistance r power dissipation constant deviation of r100 mw/k power dissipation p mw 2 200 5 -5 % ? 22000 b-value b (25/50) tol. 3% tj=25c 3950 k b (25/100) tj=25c 3996 k b-value tol. 3% vincotech ntc reference b tj=25c module properties thermal resistance, case to heatsink r thch tbd. k/w module stray inductance l sce nh chip module lead resistance, terminals -chip r cc'1+ee' tbd. m ? 3.8 5 nm terminal connection torque m 6.7 7 7.4 mounting torque m tbd. 44.2 g nm weight g 4 revisio n: 3 copyright by vincotech
f112r6a015sc target datasheet version ordering code in datamatrix as in packaging barcode as 12mm housing 10-F112R6A015SC-M438E08 m438-e08 m438-e08 12mm housing, without thermistor 10-f112r6a015sc01-m438e18 m438-e18 m438-e18 outline pinout ordering code & marking ordering code and marking - outline - pinout 5 revi sion: 3 copyright by vincotech
f112r6a015sc target datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 6 revisi on: 3 copyright by vincotech
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